CMOS RAM
Item No.: | IS61WV25616BLL-10TLI |
Supplier Details
Country: Taiwan
City: Taipei
Address: 11493 8F, No.79, Chow Tze St
TEL: +886-2-55825588
Fax: +886-2-55805500
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78 Products
SRAM
- 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
- Description: The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits.
- Features:
High speed: (IS61/64WV25616ALL/BLL)- High-speed access time: 8, 10, 20 ns
- Low Active Power: 85 mW (typical)
- Low Standby Power: 7 mW (typical) CMOS standby
- LOW POWER: (IS61/64WV25616ALS/BLS)
- High-speed access time: 25, 35, 45 ns
- Low Active Power: 35 mW (typical)
- Low Standby Power: 0.6 mW (typical) CMOS standby
- Single power supply
— Vdd 1.65V to 2.2V (IS61WV25616Axx)
— Vdd 2.4V to 3.6V (IS61/64WV25616Bxx) - Fully static operation: no clock or refresh required
- Three state outputs
- Data control for upper and lower bytes
- Delivery time: 2WEEKS from distributor
- Payment: T/T in advance