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CMOS RAM - IS61WV25616BLL-10TLI

CMOS RAM

Item No.: IS61WV25616BLL-10TLI
Supplier Details
Country: Taiwan
City: Taipei
Address: 11493 8F, No.79, Chow Tze St
TEL: +886-2-55825588
Fax: +886-2-55805500
Online Showroom: 78 Products
SRAM
  1. 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
  2. Description:  The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits.
  3. Features:
    High speed: (IS61/64WV25616ALL/BLL)
    • High-speed access time: 8, 10, 20 ns
    • Low Active Power: 85 mW (typical)
    • Low Standby Power: 7 mW (typical) CMOS standby
    • LOW POWER: (IS61/64WV25616ALS/BLS)
    • High-speed access time: 25, 35, 45 ns
    • Low Active Power: 35 mW (typical)
    • Low Standby Power: 0.6 mW (typical) CMOS standby
    • Single power supply
      — Vdd 1.65V to 2.2V (IS61WV25616Axx)
      — Vdd 2.4V to 3.6V (IS61/64WV25616Bxx)
    • Fully static operation: no clock or refresh required
    • Three state outputs
    • Data control for upper and lower bytes
  4. Delivery time: 2WEEKS from distributor
  5. Payment: T/T in advance
We have been successful in establishing our brand and sale to the international market due to our excellent quality and service of

CMOS RAM

. Delivering the best quality products conforming to the cultural needs of the client is the ultimate goal of us.