Dynamic Random Access Memory
Item No.: | IS42S16800E-7TLI |
Supplier Details
Country: Taiwan
City: Taipei
Address: 11493 8F, No.79, Chow Tze St
TEL: +886-2-55825588
Fax: +886-2-55805500
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78 Products
SRAM
- 16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
- Description: ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture.
- Features:
The 128Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V Vdd and 3.3V Vddq memory systems containing 134,217,728 bits. Internally configured as a quad-bank DRAM with a synchronous interface.
Each 33,554,432-bit bank is organized as 4,096 rows by 512 columns by 16 bits or 4,096 rows by 1,024 columns by 8 bits. The 128MbSDRAM includes anAUTOREFRESH MODE, and a power-saving, power-down mode.
All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible. - Delivery time: 2WEEKS from distributor
- Payment: T/T in advance