Photodetector Diode
Item No.: | JL-PJ-025C(250um Monitor PD) |
Supplier Details
Country: Taiwan
State: Taiwan
City: Taichung
Address: 7F-11,No.77,Shin-Jen N.1st Rd.
TEL: +886-04-22585588
Fax: +886-04-22585665
Online Showroom:
81 Products
.chip size: 380±20um
.chip width: 380±20um
.chip thickness: 150±20um
.active area: 250±5um in diameter
.With TO CAN Package
.The GaAs PD is widely used in the Gigabit Ethernet receiver or transceiver
where laser’s wafer wavelength is shorter than 870nm
.The InGaAs/InP PD is widely used in fiber optic communications as part of a receiver, transceiver or 1310nm-1550nm laser power monitor
.chip width: 380±20um
.chip thickness: 150±20um
.active area: 250±5um in diameter
.With TO CAN Package
.The GaAs PD is widely used in the Gigabit Ethernet receiver or transceiver
where laser’s wafer wavelength is shorter than 870nm
.The InGaAs/InP PD is widely used in fiber optic communications as part of a receiver, transceiver or 1310nm-1550nm laser power monitor