Laser Diode Chip
Item No.: | JL-LL301 |
Supplier Details
Country: Taiwan
State: Taiwan
City: Taichung
Address: 7F-11,No.77,Shin-Jen N.1st Rd.
TEL: +886-04-22585588
Fax: +886-04-22585665
Online Showroom:
81 Products
The specifications of the PN:JL-LL301nm 1.25G/2.5Gbps FP Laser diode for Optical communication with Transistor Out-line can package products. Such as EPON, GPON fiber communication links, Data center etc. With RoHS and Halogen Free compliance.
Structure: InGaAs/InP, backside cathode and topside anode configuration.
Feature: Low Threshold and operation current/high reliability/low electrical parasitic/
Data rates from DC to 2.5Gbps/Excellent slope efficiency and spectral width
Structure: InGaAs/InP, backside cathode and topside anode configuration.
Feature: Low Threshold and operation current/high reliability/low electrical parasitic/
Data rates from DC to 2.5Gbps/Excellent slope efficiency and spectral width